Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9048321-B2
Application number	US-201213686332-A
Country	US
Kind code	B2
Filing date	Nov 27, 2012
Priority date	Dec 2, 2011
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

Provided is a miniaturized transistor with stable and high electrical characteristics with high yield. In a semiconductor device including the transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in this order, a first sidewall insulating layer is provided in contact with a side surface of the gate electrode layer, and a second sidewall insulating layer is provided to cover a side surface of the first sidewall insulating layer. The first sidewall insulating layer is an aluminum oxide film in which a crevice with an even shape is formed on its side surface. The second sidewall insulating layer is provided to cover the crevice. A source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film and the second sidewall insulating layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
an oxide insulating film over a substrate;
an oxide semiconductor layer over the oxide insulating film;
a gate insulating film over the oxide semiconductor layer;
a gate electrode layer over the oxide semiconductor layer with the gate insulating film therebetween;
a first sidewall insulating layer over the gate insulating film to cover a first portion of a top surface of the gate insulating film and a second portion…

Assignees

• Semiconductor Energy Lab

Inventors

• Kurata Motomu
• Sasagawa Shinya
• Muraoka Taiga
• Tanaka Tetsuhiro
• Koezuka Junichi

Classifications

• H10D30/0312

  Electricity · mapped topic

• H10D30/6704 Primary

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D30/6758

  Electricity · mapped topic

• H10D30/6729

  Electricity · mapped topic