Transistor, semiconductor device, and semiconductor structure
US-2024379874-A1 · Nov 14, 2024 · US
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9048314B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9048314-B2 |
| Application number | US-201414465636-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 21, 2014 |
| Priority date | Feb 23, 2005 |
| Publication date | Jun 2, 2015 |
| Grant date | Jun 2, 2015 |
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Abstract
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A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
First claim
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We claim: 1. A transistor comprising: a gate dielectric layer formed on a substrate; a gate electrode formed on the gate dielectric layer; and a pair of source/drain regions on opposite sides of the gate electrode, the pair of source/drain regions comprising a doped semiconductor film that extends beneath the gate electrode and above a top surface of the gate dielectric layer, wherein the semiconductor film comprises a material selected from the group consisting of InSb, InAs,…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9048314B2 cover?
- A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite s…
- Who is the assignee on this patent?
- Chau Robert S, Datta Suman, Kavalieros Jack, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10D62/82. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 02 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).