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Semiconductor device and method for forming the same
US9048312B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9048312-B2 |
| Application number | US-201314025416-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2013 |
| Priority date | Sep 12, 2013 |
| Publication date | Jun 2, 2015 |
| Grant date | Jun 2, 2015 |
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Abstract
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A semiconductor device including a substrate having an active region is disclosed. A field-plate region and a bulk region are in the active region, wherein the bulk region is at a first side of the field-plate region. At least one trench-gate structure is disposed in the substrate corresponding to the bulk region. At least one source-doped region is in the substrate corresponding to the bulk region, wherein the source-doped region surrounds the trench-gate structure. A drain-doped region is in the substrate at a second side opposite to the first side of the field-plate region, wherein an extending direction of length of the trench-gate structure is perpendicular to that of the drain-doped region as viewed from a top view perspective.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a substrate having an active region, wherein a field-plate region and a bulk region are in the active region, and the bulk region is at a first side of the field-plate region; at least one trench-gate structure disposed in the substrate corresponding to the bulk region; at least one source-doped region in the substrate corresponding to the bulk region, wherein the at least one source doped region surrounds the at least…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9048312B2 cover?
- A semiconductor device including a substrate having an active region is disclosed. A field-plate region and a bulk region are in the active region, wherein the bulk region is at a first side of the field-plate region. At least one trench-gate structure is disposed in the substrate corresponding to the bulk region. At least one source-doped region is in the substrate corresponding to the bulk re…
- Who is the assignee on this patent?
- Vanguard Int Semiconduct Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/668. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 02 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).