Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9048293-B2
Application number	US-201414253409-A
Country	US
Kind code	B2
Filing date	Apr 15, 2014
Priority date	Jan 26, 2011
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

A semiconductor device and a method for manufacturing the same are disclosed. An additional spacer is formed at a lateral surface of an upper part of the bit line so that the distance of insulation films between a storage node and a neighboring storage node contact plug is increased. Accordingly, the distance between the storage node and the neighboring storage node contact is guaranteed and a bridge failure is prevented.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device comprising:
forming a bit line over a semiconductor substrate;
forming a first conductive pattern over a first sidewall of the bit line, the first conductive pattern including a first lower pattern and a first upper pattern;
forming a second conductive pattern over a second sidewall of the bit line;
forming a first spacer between the first sidewall of the bit line and the first upper pattern;
forming…

Assignees

• Sk Hynix Inc

Inventors

• Lee Un Hee

Classifications

• H10W20/098

  Electricity · mapped topic

• H10W20/074

  Electricity · mapped topic

• H10W20/076 Primary

  Electricity · mapped topic

• H10D1/68

  Electricity · mapped topic

• H10B12/0335 Primary

  Electricity · mapped topic