Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Method for treating a part made from a decomposable semiconductor material
US9048288B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9048288-B2 |
| Application number | US-201113111748-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 19, 2011 |
| Priority date | Jun 23, 2010 |
| Publication date | Jun 2, 2015 |
| Grant date | Jun 2, 2015 |
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Abstract
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The present disclosure provides methods for treating a part made from a decomposable semiconductor material, and particularly, methods for detaching a surface film from the rest of such part. According to the provided methods, a burst or pulse of light particles of short duration and very high intensity is applied to the part in order to selectively heat, under substantially adiabatic conditions, an area of the part located at a predefined depth from the surface to a temperature higher than the decomposition temperature of the material, and subsequently a surface film is detached from the rest of the part at the heated area. In preferred embodiments, the decomposable semiconductor material comprises Ga, or comprises Al x Ga y In 1-x-y N, where 0≦x≦1, 0≦y≦1 and x+y≦1.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for treating a part comprising a thermally decomposable material comprising Al x Ga y ln 1-x-y N where 0≦x≦1, 0≦y≦1 and x+y≦1, which method comprises: applying a pulse of particle flux on a surface of the part, wherein the particle flux is a flux of atomic or ionic species, with the duration and intensity of the pulsed flux being selected in order to selectively heat an area of the part located at a predefined depth from the surface under substantia…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10P90/1916Primary
Electricity · mapped topic
- H01L21/76254Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9048288B2 cover?
- The present disclosure provides methods for treating a part made from a decomposable semiconductor material, and particularly, methods for detaching a surface film from the rest of such part. According to the provided methods, a burst or pulse of light particles of short duration and very high intensity is applied to the part in order to selectively heat, under substantially adiabatic condition…
- Who is the assignee on this patent?
- Bruel Michel, Soitec Silicon On Insulator
- What technology area does this patent fall under?
- Primary CPC classification H10P90/1916. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 02 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).