Anisotropic conductive film and electronic device including the same

Patent metadata

Field	Value
Publication number	US-9048240-B2
Application number	US-201213728215-A
Country	US
Kind code	B2
Filing date	Dec 27, 2012
Priority date	Dec 28, 2011
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.

First claim

What is claimed is:

1. An electronic device, comprising:
an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition, the anisotropic conductive film-forming composition including:
a polycyclic aromatic ring-containing epoxy resin;
a fluorene epoxy resin;
nano silica; and
conductive particles;
wherein the fluorine epoxy resin has a boiling point of about 50 to about 80° C.

2. The electronic device as claimed in claim 1 , wherein the polycyclic aromatic ring-containing epoxy resin has a glass transition temperature after curing (Tg) of about 165° C. to about 250° C.

3. The electronic device as claimed in claim 1 , wherein the fluorine epoxy resin has a molecular weight of about 1,000 or less.

4. The electronic device as claimed in claim 1 , wherein the polycyclic aromatic ring-containing epoxy resin includes at least one selected from the group of tetra-functional aromatic ring-containing epoxy resins and bi-functional aromatic ring-containing epoxy resins.

5. The electronic device as claimed in claim 1 , wherein a weight ratio of the polycyclic aromatic ring-containing epoxy resin to the nano silica ranges from about 3:1 to about 6:1.

6. The electronic device as claimed in claim 1 , wherein the fluorene epoxy resin is a resin containing a glycidyl group in a bisphenol fluorene, the bisphenol fluorene being represented by Formula I:

wherein each R is independently an alkyl group, an alkoxy group, an aryl group or a cycloalkyl group, each m is independently an integer from 0 to 4, and each n is independently an integer from 1 to 5.

7. The electronic device as claimed in claim 1 , wherein a weight ratio of the polycyclic aromatic ring-containing epoxy resin to the fluorene epoxy resin ranges from about 1:0.1 to about 1:1.5.

8. The electronic device as claimed in claim 1 , wherein the anisotropic conductive film is formed from the anisotropic conductive film-forming composition in a chip on glass (COG) mounting process.

9. An electronic device, comprising an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition, the anisotropic conductive film-forming composition including:
a polycyclic aromatic ring-containing epoxy resin; and
a fluorene epoxy resin having a boiling point of about 50 to about 80° C.,
wherein a weight ratio of the polycyclic aromatic ring-containing epoxy resin to the fluorene epoxy resin ranges from about 1:0.1 to about 1:1.5.

10. The electronic device as claimed in claim 9 , wherein the fluorene epoxy resin has a liquid phase at 25° C.

11. The electronic device as claimed in claim 9 , wherein the polycyclic aromatic ring-containing epoxy resin includes at least one selected from the group of tetra-functional aromatic ring-containing epoxy resins and bi-functional aromatic ring-containing epoxy resins.

12. The electronic device as claimed in claim 9 , wherein a weight ratio of the polycyclic aromatic ring-containing epoxy resin to the fluorene epoxy resin ranges from about 1:0.14 to about 1:1.

13. The electronic device as claimed in claim 9 , wherein:
the anisotropic conductive film-forming composition further includes nano silica, and
a weight ratio of the polycyclic aromatic ring-containing epoxy resin to the nano silica ranges from about 3:1 to about 6:1.

14. The electronic device as claimed in claim 9 , wherein the anisotropic conductive film provides uniform indentation after the film is bonded.

15. The electronic device as claimed in claim 14 , wherein the anisotropic conductive film has a preliminary pressing temperature of 60° C. or more.

16. The electronic device as claimed in claim 1 , wherein the anisotropic conductive film has a peel strength of about 4 MPa or more as measured after pressing at 70° C. and 1 MPa for 0.5 seconds.

17. The electronic device as claimed in claim 16 , wherein the anisotropic conductive film has a preliminary pressing temperature of 60° C. or more.

18. The electronic device as claimed in claim 16 , wherein the anisotropic conductive film provides uniform indentation after the film is bonded.

Assignees

• Park Young Woo
• Kim Nam Ju
• Park Kyoung Soo
• Seo Joon Mo
• Sul Kyung Il
• Uh Dong Seon
• Yu Arum
• Choi Hyun Min
• Cheil Ind Inc

Inventors

• Park Young Woo
• Kim Nam Ju
• Park Kyoung Soo
• Seo Joon Mo
• Sul Kyung Il
• Uh Dong Seon
• Yu Arum
• Choi Hyun Min

Classifications

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/354

  comprising polymers · CPC title

• H10W72/353

  not comprising solid metals or solid metalloids, e.g. ceramics · CPC title