Read-disturbance-free nonvolatile content addressable memory (CAM)

Patent metadata

Field	Value
Publication number	US-9047950-B2
Application number	US-201314014783-A
Country	US
Kind code	B2
Filing date	Aug 30, 2013
Priority date	Sep 11, 2012
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.

First claim

What is claimed is:

1. A voltage-controlled magnetic anisotropy (VCMA) magnetoelectric content addressable memory (CAM) apparatus, comprising:
an array of magnetoelectric content addressable memory (CAM) cells, wherein each cell receives two word lines, a bit line, a match-line, complementary source lines, a switched supply voltage and a ground;
at least two complementary magnetoelectric tunnel junctions (MEJs), comprising a first MEJ and a second MEJ in each of said CAM cells,…

Assignees

• Univ California

Inventors

• Amiri Pedram Khalili
• Dorrance Richard
• Markovic Dejan
• Wang Kang L

Classifications

• H10N50/85

  Electricity · mapped topic

• G11C15/046

  Physics · mapped topic

• G11C11/5607

  Physics · mapped topic

• G11C13/004

  Physics · mapped topic

• G11C15/02 Primary

  Physics · mapped topic