Optical modulator module and semiconductor optical modulator

Patent metadata

Field	Value
Publication number	US-9046703-B2
Application number	US-201414191025-A
Country	US
Kind code	B2
Filing date	Feb 26, 2014
Priority date	Feb 27, 2013
Publication date	Jun 2, 2015
Grant date	Jun 2, 2015

Abstract

A semiconductor optical modulator includes optical input and output portions; a plurality of Mach-Zehnder modulators, each including first and second waveguide arms having first and second modulation electrodes, respectively; an optical demultiplexer coupled between the optical input portion and the Mach-Zehnder modulators through an optical waveguide; an optical multiplexer coupled between the optical output portion and the Mach-Zehnder modulators; a plurality of electrical inputs; and a plurality of differential transmission lines electrically connecting the electrical inputs to the Mach-Zehnder modulators. The first modulation electrode and the second modulation electrode of at least one of the Mach-Zehnder modulators, one of the electrical inputs, and one of the differential transmission lines that connects such one electrical input to such one Mach-Zehnder modulator form an electrical circuit having a differential impedance in a range of 80Ω to 95Ω.

First claim

What is claimed is:

1. A semiconductor optical modulator comprising:
an optical input portion;
an optical output portion;
a plurality of Mach-Zehnder modulators arrayed in a direction of a first axis, each of the Mach-Zehnder modulators including a first waveguide arm with a first modulation electrode and a second waveguide arm with a second modulation electrode;
an optical waveguide having a mesa structure;
an optical demultiplexer coupled between the optical input portion and the Mach-Zehnder modulators through the optical waveguide;
an optical multiplexer coupled between the optical output portion and the Mach-Zehnder modulators;
a plurality of electrical inputs; and
a plurality of differential transmission lines electrically connecting the electrical inputs to the Mach-Zehnder modulators, wherein
the Mach-Zehnder modulators, the optical demultiplexer, the optical multiplexer, the electrical inputs, and the differential transmission lines are disposed on a single substrate, and
the first modulation electrode and the second modulation electrode of at least one Mach-Zehnder modulator, and one of the electrical inputs, and one of the differential transmission lines that connects the said one of the electrical inputs to the at least one Mach-Zehnder modulator form an electrical circuit having a differential impedance in a range of 80Ω 95Ω.

2. The semiconductor optical modulator according to claim 1 , further comprising a resin body disposed on the substrate, the resin body embedding the first and second waveguide arms of each Mach-Zehnder modulator, the optical demultiplexer, and the mesa structure of the optical waveguide therein,
wherein each of the Mach-Zehnder modulators further includes a modulator common electrode,
wherein, in each of the Mach-Zehnder modulators;
the first waveguide arm includes a first semiconductor layer having a first conductivity type, a third semiconductor layer having a second conductivity type, and a first core layer disposed between the first semiconductor layer and the third semiconductor layer,
the second waveguide arm includes a second semiconductor layer having a first conductivity type, a fourth semiconductor layer having a second conductivity type, and a second core layer disposed between the semiconductor second layer and the fourth semiconductor layer,
the first modulation electrode is disposed on the first semiconductor layer,
the second modulation electrode is disposed on the second semiconductor layer,
the modulator common electrode is contacted with the third semiconductor layer and the fourth semiconductor layer,
wherein each of the electrical inputs includes a first electrode, a second electrode, and a common electrode disposed between the first electrode and the second electrode, and wherein
each of the differential transmission lines includes a first conductor connecting the first electrode to the first modulation electrode, a second conductor connecting the second electrode to the second modulation electrode, and a third conductor connecting the common electrode to the modulator common electrode,
the third conductor is positioned between the first conductor and the second conductor, and
the first conductor, the second conductor, and the third conductor extend on the resin body in parallel.

3. The semiconductor optical modulator according to claim 2 , wherein the resin body contains a benzocyclobutene resin.

4. The semiconductor optical modulator according to claim 2 , wherein the first conductor, the second conductor, and the third conductor extend over the mesa structure of the optical waveguide through the resin body, and
the resin body is disposed between the first conductor, the second conductor, and the third conductor and the mesa structure of the optical waveguide.

5. The semiconductor optical modulator according to claim 2 , wherein
the modulator common electrode has a width greater than at least a width of one of the first modulation electrode and the second modulation electrode, and
in the differential transmission lines, the third conductor has a width smaller than the widths of the first conductor and the second conductor.

6. The semiconductor optical modulator according to claim 2 , further comprising a connecting semiconductor layer having the second conductivity type, the connecting semiconductor layer connecting the third semiconductor layer of the first waveguide arm and the fourth semiconductor layer of the second waveguide arm to each other, wherein
the resin body has a first opening on the first waveguide arm, a second opening on the second waveguide arm, and a third opening on the connecting semiconductor layer,
the first modulation electrode is connected to the first semiconductor layer through the first opening,
the second modulation electrode is connected to the second semiconductor layer through the second opening, and
the modulator common electrode is connected to the connecting semiconductor layer through the third opening disposed between the first waveguide arm and the second waveguide arm.

7. The semiconductor optical modulator according to claim 1 , wherein
the substrate has a first edge and a second edge each extending in the direction of the first axis, and a third edge and a fourth edge each extending in a direction of a second axis that intersects the first axis,
in the electrical inputs, the first electrode, the second electrode, and the common electrode are arrayed along the first edge,
the optical output portion is positioned at the second edge opposite to the first edge, and
the optical input portion is positioned at the third edge or the fourth edge.

8. The semiconductor optical modulator according to claim 1 , wherein the optical demultiplexer includes a multi-mode interference coupler.

9. An optical modulator module comprising:
a semiconductor optical modulator including a plurality of electrical inputs;
a drive circuit including a differential input having a first impedance and a differential output having a second impedance that is different from the first impedance; and
a relay board including wiring lines that connect the differential output of the drive circuit to the electrical inputs of the semiconductor optical modulator,
wherein the semiconductor optical modulator further includes:
an optical input portion;
an optical output portion;
a plurality of Mach-Zehnder modulators arrayed in a direction of a first axis, each of the Mach-Zehnder modulators including a first waveguide arm with a first modulation electrode and a second waveguide arm with a second modulation electrode;
an optical demultiplexer coupled between the optical input portion and the Mach-Zehnder modulators through an optical waveguide having a mesa structure;
an optical multiplexer coupled between the optical output portion and the Mach-Zehnder modulators; and
a plurality of differential transmission lines electrically connecting the electrical inputs to the Mach-Zehnder modulators, and wherein

the Mach-Zehnder modulators, the optical demultiplexer, the optical multiplexer, the electrical inputs, and the differential transmission lines are disposed on a single substrate, and
the first modulation electrode and the second modulation electrode of at least one Mach-Zehnder modulator, one electrical input, and one differential transmission line that connects the said one electrical input to the at least one Mach-Zehnder modulator form an electrical circuit having a differential impedance in a range of 80Ω to 95Ω.

10. The optical modulator module according to claim 9 , wherein the second impedance of the drive circuit is 80Ω or more and 95Ω or less, and
a differential impedance of the wiring lines on

Assignees

• Sumitomo Electric Industries

Inventors

• Fukuda Chie
• Kono Naoya
• Seki Morihiro
• Yamaji Kazuhiro
• Yamauchi Yasuyuki
• Tanaka Keiji
• Tatsumi Taizo
• Itabashi Naoki

Classifications

• H04B10/556

  Digital modulation, e.g. differential phase shift keying [DPSK] or frequency shift keying [FSK] · CPC title

• G02F1/0121 Primary

  Operation of devices; Circuit arrangements, not otherwise provided for in this subclass · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02B6/29355

  Cascade arrangement of interferometers · CPC title