Method and system for multi-patterning layout decomposition
US-9223924-B2 · Dec 29, 2015 · US
US9041908B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9041908-B2 |
| Application number | US-201213555785-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 23, 2012 |
| Priority date | Mar 30, 2010 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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The disclosure relates to a method for adapting a projection exposure apparatus for microlithography to a mask having structures with different pitches and/or different structure widths in different structure directions. Wavefront aberrations induced by the mask are reduced by a manipulator of the projection exposure apparatus for microlithography.
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What is claimed is: 1. A method, comprising: providing a microlithography projection exposure apparatus, comprising: an illumination system to illuminate a mask with illumination light and to produce different illumination settings, the mask having a plurality of different pitches and/or structure widths in different structure directions of the mask; and an objective to image the mask situated in an object plane of the objective onto an object situated in an image plane of the…
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