Bonding method and bonding apparatus
US-11931995-B2 · Mar 19, 2024 · US
Semiconductor device
US9041007B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9041007-B2 |
| Application number | US-201113299882-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 18, 2011 |
| Priority date | Nov 25, 2010 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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Abstract
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A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n + -source region formed in an upper portion of an n − -drift layer. An interlayer insulating film covers the gate electrode. An Al source electrode extends on the interlayer insulating film. An Al gate pad is connected to the gate electrode. A barrier metal layer that prevents diffusion of aluminum is interposed between the source electrode and the interlayer insulating film, and between the gate pad and the gate electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a main transistor cell with a gate insulating film formed on a silicon carbide semiconductor layer, a gate electrode formed on said gate insulating film, and a source region that is an impurity region formed in an upper portion of said semiconductor layer; an interlayer insulating film in direct contact with said gate electrode; a source electrode connected to said source region while extending over said interlayer in…
Assignees
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Electricity · mapped topic
- H10P10/00Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9041007B2 cover?
- A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n + -source region formed in an upper portion of an n − -drift layer. An interlayer insulating film covers the gate electrode. An Al source electrode extends on the interlayer insulating film. An Al gate pad is connected to the gate electrode. A barrier metal layer that prevents diffusion of aluminum is interpo…
- Who is the assignee on this patent?
- Suekawa Eisuke, Oritsuki Yasunori, Tarui Yoichiro, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P10/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).