Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9040985-B2
Application number	US-201414331460-A
Country	US
Kind code	B2
Filing date	Jul 15, 2014
Priority date	Jan 23, 2009
Publication date	May 26, 2015
Grant date	May 26, 2015

Abstract

An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiO x is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiO x . The source and drain regions are formed using an oxide semiconductor layer which does not include SiO x or an oxynitiride film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a gate electrode;
an oxide semiconductor layer adjacent to the gate electrode;
an insulating layer between the gate electrode and the oxide semiconductor layer;
a source electrode electrically connected to the oxide semiconductor layer through a source region; and
a drain electrode electrically connected to the oxide semiconductor layer through a drain region,
wherein the gate electrode comprises a stack of a firs…

Assignees

• Semiconductor Energy Lab

Inventors

• Sakata Junichiro
• Shimazu Takashi
• Ohara Hiroki
• Sasaki Toshinari
• Yamazaki Shunpei

Classifications

• H10P14/3434

  Electricity · mapped topic

• H10P14/3426

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D64/62

  Electricity · mapped topic

• H10D30/6713 Primary

  Electricity · mapped topic