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Thin film transistor and organic light emitting pixel having the same
US9040971B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040971-B2 |
| Application number | US-201314035317-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 24, 2013 |
| Priority date | Nov 14, 2012 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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Abstract
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A thin film transistor (TFT) that includes a control electrode, a semiconductor pattern, a first input electrode, a second input electrode, and an output electrode is disclosed. in one aspect, the semiconductor pattern includes a first input area, a second input area, a channel area, and an output area. The channel area is formed between the first input area and the output area and overlapped with the control electrode to be insulated from the control electrode. The second input area is formed between the first input area and the channel area and doped with a doping concentration different from a doping concentration of the first input areas. The second input electrode makes contact with the second input area and receives a control voltage to control a threshold voltage.
First claim
Opening claim text (preview).
What is claimed is: 1. A thin film transistor, comprising: a control electrode; a semiconductor pattern that includes a first input area, an output area, a channel area formed between the first input area and the output area and overlapped with the control electrode to be insulated from the control electrode, and a second input area formed between and abutting the first input area and the channel area and doped with a doping concentration different from a doping concentration of…
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Classifications
- H10D30/6757Primary
Electricity · mapped topic
- H10D30/6711Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9040971B2 cover?
- A thin film transistor (TFT) that includes a control electrode, a semiconductor pattern, a first input electrode, a second input electrode, and an output electrode is disclosed. in one aspect, the semiconductor pattern includes a first input area, a second input area, a channel area, and an output area. The channel area is formed between the first input area and the output area and overlapped w…
- Who is the assignee on this patent?
- Samsung Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6757. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).