Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US9040964B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040964-B2 |
| Application number | US-201313954966-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2013 |
| Priority date | Feb 28, 2013 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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An apparatus and a method of manufacturing a thin film semiconductor device having a thin film transistor with improved electrical properties in organic light-emitting display apparatus are described.
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What is claimed is: 1. A thin film semiconductor device comprising: a substrate; an active pattern on the substrate and comprising a rounded upper edge portion; a first gate insulation film exposing the rounded upper edge portion of the active pattern and covering a flat upper surface of the active pattern; a second gate insulation film covering the rounded upper edge portion of the active pattern and covering the first gate insulation film; and a gate electrode overlappin…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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