Method for processing a semiconductor device with two closely spaced gates
US-2021391526-A1 · Dec 16, 2021 · US
US9040959B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040959-B2 |
| Application number | US-201313860246-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 10, 2013 |
| Priority date | May 8, 2012 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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A topological qubit wire hosts Majorana zero-energy modes and includes a superconductor, which may be an s-wave superconductor, and a quasi-1D nanowire, which may be a semi-conductor. The Majorana zero-energy modes are localized at ends of the quasi-1D nanowire, which may be sized and shaped to provide occupancy of a few transverse modes in a first direction and occupancy of a few transverse modes in a second direction. In some instances, the occupancy in the first direction may be greater than or equal to 3, and the occupancy in the second direction may be 1.
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What is claimed is: 1. A topological qubit wire, comprising: a superconductor; and a quasi-1D multi-band nanowire coupled, via quantum tunneling, to the superconductor and having a Majorana segment that supports Majorana zero-energy modes at opposed longitudinal ends of the Majorana segment, wherein the Majorana segment has a longitudinal length extending between the opposed longitudinal ends and a transverse width, and wherein the quantum tunneling between the superconductor an…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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