Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
US9040908B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040908-B2 |
| Application number | US-201313930911-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2013 |
| Priority date | Jun 28, 2013 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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A method and apparatus for altering the orientation of a charged particle beam sample is presented. Embodiments of the method includes providing a first work piece on a sample stage having a sample stage plane, the first work piece including a lamella plane in a first orientation. A sample is milled from the first work piece using an ion beam so that the sample is substantially free from the first work piece. A probe is attached to the sample, the probe including a shaft having a shaft axis, the shaft axis oriented at a shaft angle in relation to the sample stage plane, the shaft angle being non-normal to the sample stage plane. The probe is rotated about the shaft axis through a rotational angle so that the lamella plane is in a second orientation. The sample is attached to or placed on the sample on either the first work piece, the first work piece being the work piece from which the sample was milled, or on a second work piece, the second work piece being a work piece from which the sample was not milled. The sample is thinned using the ion beam to form a lamella, the lamella being oriented in the lamella plane.
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I claim: 1. A method for creating a plan view TEM sample, comprising: providing a first work piece on a sample stage having a sample stage plane, the first work piece including a lamella plane being oriented in a first orientation; milling a sample from the first work piece using an ion beam so that the sample is substantially free from the first work piece; attaching a probe to the sample, the probe including a shaft having a shaft axis, the shaft axis oriented at a shaft ang…
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