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Oxide sintered body and sputtering target
US9040441B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040441-B2 |
| Application number | US-201214002768-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 1, 2012 |
| Priority date | Mar 2, 2011 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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Abstract
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Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient σ of the specific resistance is 0.02 or less.
First claim
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The invention claimed is: 1. An oxide sintered body obtained by mixing zinc oxide, tin oxide, and an oxide of at least one metal M selected from the group consisting of Al, Hf, Ni, Si, Ga, and Ta, and sintering the mixture, wherein, when an in-plane specific resistance and a specific resistance in a depth direction of the oxide sintered body are approximated by a Gaussian distribution, a distribution coefficient σ of the specific resistance is 0.02 or less. 2…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9040441B2 cover?
- Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current…
- Who is the assignee on this patent?
- Goto Hiroshi, Iwasaki Yuki, Kobelco Res Inst Inc
- What technology area does this patent fall under?
- Primary CPC classification C04B35/453. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).