Manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-9040396-B2
Application number	US-201414169837-A
Country	US
Kind code	B2
Filing date	Jan 31, 2014
Priority date	Sep 13, 2010
Publication date	May 26, 2015
Grant date	May 26, 2015

Abstract

An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

First claim

What is claimed is:

1. A manufacturing method of a semiconductor device comprising:
forming an oxide semiconductor layer wherein the oxide semiconductor layer comprises an oxide including crystals having c-axis alignment;
forming a protective conductive film over the oxide semiconductor layer;
forming a conductive film over the protective conductive film;
selectively etching the conductive film under a condition that a first etching selectivity of the conductive film to the…

Assignees

• Semiconductor Energy Lab

Inventors

• Jintyou Masami
• Aihara Yamato
• Tochibayashi Katsuaki
• Arakawa Toru

Classifications

• H10P50/282

  Electricity · mapped topic

• H10P14/3434

  Electricity · mapped topic

• H10P14/3426

  Electricity · mapped topic

• H10P14/2901

  Electricity · mapped topic

• H10P14/22

  Electricity · mapped topic