Semiconductor memory device and manufacturing method of semiconductor memory device
US-2024313073-A1 · Sep 19, 2024 · US
US9040375B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040375-B2 |
| Application number | US-201313751185-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 28, 2013 |
| Priority date | Jan 28, 2013 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method for processing a carrier accordance with various embodiments may include: forming a structure over the carrier, the structure including at least two adjacent structure elements arranged at a first distance between the same; depositing a spacer layer over the structure, wherein the spacer layer may be deposited having a thickness greater than half of the first distance, wherein the spacer layer may include electrically conductive spacer material; removing a portion of the spacer layer, wherein spacer material of the spacer layer may remain in a region between the at least two adjacent structure elements; and electrically contacting the remaining spacer material.
Opening claim text (preview).
What is claimed is: 1. A method for processing a carrier, the method comprising: forming a structure over the carrier, the structure comprising two adjacent structure elements respectively formed in a U-shape so that the two adjacent structure elements are arranged at a first distance between the same; depositing a spacer layer over the structure, wherein the spacer layer is deposited having a thickness greater than half of the first distance, wherein the spacer layer comprises…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.