Method for processing a carrier, method for fabricating a charge storage memory cell, method for processing a chip, and method for electrically contacting a spacer structure

US9040375B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9040375-B2
Application numberUS-201313751185-A
CountryUS
Kind codeB2
Filing dateJan 28, 2013
Priority dateJan 28, 2013
Publication dateMay 26, 2015
Grant dateMay 26, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for processing a carrier accordance with various embodiments may include: forming a structure over the carrier, the structure including at least two adjacent structure elements arranged at a first distance between the same; depositing a spacer layer over the structure, wherein the spacer layer may be deposited having a thickness greater than half of the first distance, wherein the spacer layer may include electrically conductive spacer material; removing a portion of the spacer layer, wherein spacer material of the spacer layer may remain in a region between the at least two adjacent structure elements; and electrically contacting the remaining spacer material.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for processing a carrier, the method comprising: forming a structure over the carrier, the structure comprising two adjacent structure elements respectively formed in a U-shape so that the two adjacent structure elements are arranged at a first distance between the same; depositing a spacer layer over the structure, wherein the spacer layer is deposited having a thickness greater than half of the first distance, wherein the spacer layer comprises…

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What does patent US9040375B2 cover?
A method for processing a carrier accordance with various embodiments may include: forming a structure over the carrier, the structure including at least two adjacent structure elements arranged at a first distance between the same; depositing a spacer layer over the structure, wherein the spacer layer may be deposited having a thickness greater than half of the first distance, wherein the spac…
Who is the assignee on this patent?
Infineon Technologies Dresden Gmbh
What technology area does this patent fall under?
Primary CPC classification H10D64/037. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).