Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Method for pattern formation, method and composition for resist underlayer film formation, and resist underlayer film
US9040232B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040232-B2 |
| Application number | US-201113246915-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 28, 2011 |
| Priority date | Sep 29, 2010 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for forming a pattern, the method comprising: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition comprising a polymer comprising a structural unit derived from (A) a compound comprising a group represented by the following formula (1):…
Assignees
Inventors
Classifications
- H10P50/73Primary
Electricity · mapped topic
Physics · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US9040232B2 cover?
- Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer …
- Who is the assignee on this patent?
- Minegishi Shin-Ya, Nakafuji Shin-Ya, Murakami Satoru, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P50/73. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).