Systems and Methods for Producing Carbon Solids
US-2024417566-A1 · Dec 19, 2024 · US
Filtering film structure
US9040144B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9040144-B2 |
| Application number | US-201213603128-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 4, 2012 |
| Priority date | Sep 4, 2012 |
| Publication date | May 26, 2015 |
| Grant date | May 26, 2015 |
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- Title
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Abstract
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A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A filtering film structure, comprising: a film comprising a plurality of holes; a conductive layer disposed on an inner surface of the holes; and a dielectric layer disposed on the conductive layer; an electrical charge layer formed on the surface of the dielectric layer when a voltage is applied to the conductive layer. 2. The filtering film structure of claim 1 , wherein the material of the film comprises aluminum oxide. 3. The filtering film structure of claim 1 , wherein the material of the conductive layer comprises metal, metal oxide or alloy. 4. The filtering film structure of claim 3 , wherein the metal comprises aluminum, indium, tin, zinc, silver, gold, or platinum. 5. The filtering film structure of claim 1 , wherein the material of the dielectric layer comprises HfO 2 , ZrO 2 , BaTiO 3 , or Al 2 O 3 . 6. The filtering film structure of claim 1 , wherein the thickness of the conductive layer is between 1 nm and 100 nm. 7. The filtering film structure of claim 1 , wherein the thickness of the dielectric layer is between 1 nm and 100 nm. 8. The filtering film structure of claim 1 , wherein the electrical charge layer has a largest thickness of 100 nm. 9. The filtering film structure of claim 1 , wherein the inner diameter of the holes is between 10 nm and 500 nm. 10. The filtering film structure of claim 1 , wherein the inner diameter of the holes is shrunk when the voltage is applied to the conductive layer. 11. The filtering film structure of claim 1 , wherein the voltage is between 0.01V and 100V.
Assignees
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Classifications
Apparatus therefor · CPC title
- B82Y30/00Primary
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
Keyed · CPC title
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Frequently asked questions
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- What does patent US9040144B2 cover?
- A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.
- Who is the assignee on this patent?
- Tseng Fan-Gang, Chueh Yu-Lun, Chang Chia-Jung, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification B82Y30/00. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue May 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).