Low noise voltage controlled oscillator

US9035708B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9035708-B2
Application numberUS-201313916612-A
CountryUS
Kind codeB2
Filing dateJun 13, 2013
Priority dateJun 13, 2013
Publication dateMay 19, 2015
Grant dateMay 19, 2015

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Abstract

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An enhanced negative resistance voltage controlled oscillator (VCO) circuit is provided, in which a parallel connection of a capacitor and a resistor configured to provide frequency-dependent transconductance is present across source nodes of a first pair of field effect transistors in which gate nodes and drain nodes are cross-coupled. The source nodes of the first pair of field effect transistors are electrically shorted to drain nodes of a second pair of field effect transistors of which the gate nodes are electrically shorted to the gate nodes of the first pair of field effect transistors. The parallel connection of the capacitor and the resistor includes a parallel connection of a capacitor and a resistor such that the net transconductance of the first pair of field effect transistors is less at low frequencies where thermal noise and flicker noise are dominant part of the phase noise than at the operational frequency range.

First claim

Opening claim text (preview).

What is claimed is: 1. A voltage controlled oscillator (VCO) circuit comprising: a first transistor and a second transistor, wherein a gate of said first transistor is electrically shorted to a drain of said second transistor, and a gate of said second transistor is electrically shorted to a drain of said first transistor; at least one inductor electrically shorted to said drain of said first transistor at one end and electrically shorted to said drain of said second field trans…

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What does patent US9035708B2 cover?
An enhanced negative resistance voltage controlled oscillator (VCO) circuit is provided, in which a parallel connection of a capacitor and a resistor configured to provide frequency-dependent transconductance is present across source nodes of a first pair of field effect transistors in which gate nodes and drain nodes are cross-coupled. The source nodes of the first pair of field effect transis…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H03B5/24. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).