Memory detection method, computer device and storage medium
US-11929108-B2 · Mar 12, 2024 · US
US9035673B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035673-B2 |
| Application number | US-69301910-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 25, 2010 |
| Priority date | Jan 25, 2010 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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A system and method for in-process yield evaluation and correction in an array type of device are provided. The system and method include measuring electrical resistance between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical resistance to identify at least one of the following: GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects.
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What is claimed is: 1. A method for in-process yield evaluation in an array type of device, comprising: measuring an electrical property between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical property to identify interlayer shunt defects; wherein interlayer shunt defects are identified through a process including: measuring electrical resistance between individual DATA lines and the GATE bus I/O…
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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