Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
US9035474B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035474-B2 |
| Application number | US-79351510-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 3, 2010 |
| Priority date | Apr 6, 2010 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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Official abstract text for this publication.
The invention relates to a method for manufacturing a semiconductor substrate, in particular, a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor substrate and the handle substrate to obtain a donor-handle compound.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor substrate, comprising: providing a donor substrate and a semiconductor handle substrate; implanting ions into the semiconductor handle substrate and forming one or more alignment marks buried completely inside the semiconductor handle substrate by the implantation of the ions, the one or more alignment marks being configured to be detectable using electromagnetic radiation in the infrared region of the electromagn…
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