Mram device with octagon profile
US-2024135978-A1 · Apr 25, 2024 · US
US9035404B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035404-B2 |
| Application number | US-201314138490-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2013 |
| Priority date | Mar 31, 2010 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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Official abstract text for this publication.
A semiconductor device includes a substrate, a multilayer wiring layer formed over the substrate, an MTJ (Magnetic Tunnel Junction) element formed in an insulating layer located lower than an uppermost wiring layer in the multilayer wiring layer, a wiring formed in a wiring layer immediately above the MTJ element and coupled to the MTJ element, and a shield conductor region provided in the wiring or a wiring layer immediately above the wiring, and covering an entirety of the MTJ element in a plan view.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a substrate; a multilayer wiring layer formed over the substrate; an MTJ (Magnetic Tunnel Junction) element formed in an insulating layer located lower than an uppeimost wiring layer in the multilayer wiring layer; a wiring formed in a wiring layer immediately above the MTJ element and coupled to the MTJ element; and a shield conductor region provided in a wiring layer immediately above the wiring, and covering an…
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