Mram device with octagon profile
US-2024135978-A1 · Apr 25, 2024 · US
Spin-torque magnetoresistive structures
US9035403B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035403-B2 |
| Application number | US-201414173161-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 5, 2014 |
| Priority date | May 29, 2009 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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Abstract
Official abstract text for this publication.
Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a first ferromagnetic layer, a first nonmagnetic spacer layer proximate to the first ferromagnetic layer, a second ferromagnetic layer proximate to the first nonmagnetic spacer layer, and a first antiferromagnetic layer proximate to the second ferromagnetic layer. For example, the first ferromagnetic layer may comprise a first pinned ferromagnetic layer, the second ferromagnetic layer may comprise a free ferromagnetic layer, and the first antiferromagnetic layer may comprise a free antiferromagnetic layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetoresistive structure comprising: a first pinned ferromagnetic layer; a first nonmagnetic spacer layer in physical contact with the first pinned ferromagnetic layer; a free side stack comprising: a second free ferromagnetic layer in physical contact with the first nonmagnetic spacer layer, wherein the second free ferromagnetic layer has a first thickness; and a first free antiferromagnetic layer in physical contact with the second free ferromag…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L27/222Primary
Electricity · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US9035403B2 cover?
- Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a first ferromagnetic layer, a first nonmagnetic spacer layer proximate to the first ferromagnetic layer, a second ferromagnetic layer proximate to the first nonmagnetic spacer layer, and a first antiferromagnetic layer proximate to the second ferrom…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01L27/222. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).