Field-effect device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9035375-B2
Application number	US-201313740048-A
Country	US
Kind code	B2
Filing date	Jan 11, 2013
Priority date	Aug 8, 2008
Publication date	May 19, 2015
Grant date	May 19, 2015

Abstract

Embodiments relate to a field-effect device that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.

First claim

What is claimed is:

1. A field-effect device, comprising:
a body region of a second conductivity type;
a well region formed in the body region;
a first source/drain region of a first conductivity type;
a doped region of the first conductivity type disposed laterally adjacent to the first source/drain region, a doping concentration level in the doped region being lower than a doping concentration level of the first source/drain region;
a second source/drain region of the fi…

Assignees

• Infineon Technologies Ag

Inventors

• Shrivastava Mayank
• Gossner Harald
• Rao Ramgopal
• Shojaei Baghini Maryam

Classifications

• H10P30/222 Primary

  Electricity · mapped topic

• H10P30/204

  Electricity · mapped topic

• H10P30/21

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic

• H10W10/014

  Electricity · mapped topic