Semiconductor device

Patent metadata

Field	Value
Publication number	US-9035320-B2
Application number	US-201313971264-A
Country	US
Kind code	B2
Filing date	Aug 20, 2013
Priority date	Sep 19, 2012
Publication date	May 19, 2015
Grant date	May 19, 2015

Abstract

According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side of the substrate and includes Al X Ga 1-X N (0≦X≦1). The second semiconductor region is provided on a side opposite to the substrate of the first semiconductor region and includes Al Y Ga 1-Y N (0≦Y≦1, X≦Y). The first electrode is provided on a side opposite to the first semiconductor region of the second semiconductor region and ohmically connects to the second semiconductor region. The conducting section electrically connects between the first electrode and the conductive region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate including a conductive region and having a first surface;
a first semiconductor region provided on the first surface side of the substrate and including Al X Ga 1-X N (0≦X≦1);
a second semiconductor region provided on a side opposite to the substrate of the first semiconductor region and including Al Y Ga 1-Y N (0≦Y≦1, X≦Y);
a first electrode provided on a side opposite to the first semiconductor region of…

Assignees

• Toshiba Kk

Inventors

• Saito Yasunobu
• Fujimoto Hidetoshi
• Ohno Tetsuya
• Yoshioka Akira
• Saito Wataru
• Naka Toshiyuki

Classifications

• H10W90/724

  Electricity · mapped topic

• H10W72/9415

  Electricity · mapped topic

• H10W72/932

  Electricity · mapped topic

• H10W72/926

  Electricity · mapped topic

• H10W72/922

  Electricity · mapped topic