Thin film transistor and manufacturing method therefor, array substrate, and display device
US-11869976-B2 · Jan 9, 2024 · US
Thin film transistor, method of fabricating the same, and display apparatus having the same
US9035296B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035296-B2 |
| Application number | US-201313893817-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 14, 2013 |
| Priority date | Jan 7, 2013 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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Abstract
Official abstract text for this publication.
A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A thin film transistor comprising: a semiconductor layer disposed on a base substrate and including an oxide semiconductor material; a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer; a first low carrier concentration area disposed between the source electrode and the semiconductor layer; a second low carrier concentration area disposed between the drain electrode and the semiconductor lay…
Assignees
Inventors
Classifications
- H10D30/6715Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/6755Primary
Electricity · mapped topic
- H01L29/78621Primary
Electricity · mapped topic
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- What does patent US9035296B2 cover?
- A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain elec…
- Who is the assignee on this patent?
- Samsung Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/6715. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).