Organic molecular memory and method of manufacturing the same
US-9172053-B2 · Oct 27, 2015 · US
Nonvolatile memory device
US9035289B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9035289-B2 |
| Application number | US-201313930832-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2013 |
| Priority date | Jul 27, 2012 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A nonvolatile memory device includes a first conductive unit, a second conductive unit, and a storage layer. The first conductive unit has a first work function. The second conductive unit has a second work function smaller than the first work function. The storage layer is provided between the first conductive unit and the second conductive unit. The storage layer is made using a source material including an aromatic diamine molecule and an aromatic tetracarboxylic dianhydride molecule. An ionization potential of the aromatic diamine molecule is greater than the first work function. An electron affinity of the aromatic tetracarboxylic dianhydride molecule is less than the second work function.
First claim
Opening claim text (preview).
What is claimed is: 1. A nonvolatile memory device, comprising: a first conductive unit having a first work function; a second conductive unit having a second work function smaller than the first work function; and a storage layer provided between the first conductive unit and the second conductive unit, the storage layer being reversibly transitionable between a first state and a second state by at least one selected from a voltage applied via the first conductive unit and th…
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9035289B2 cover?
- A nonvolatile memory device includes a first conductive unit, a second conductive unit, and a storage layer. The first conductive unit has a first work function. The second conductive unit has a second work function smaller than the first work function. The storage layer is provided between the first conductive unit and the second conductive unit. The storage layer is made using a source materi…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10K10/50. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).