Surface plasma modification of porous thin-films to optimize pore filling
US-9214335-B2 · Dec 15, 2015 · US
Method for manufacturing a porous insulation film and a method for manufacturing a semiconductor device comprising a porous insulation film
US9034740B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9034740-B2 |
| Application number | US-201313887668-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 6, 2013 |
| Priority date | May 8, 2012 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
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Abstract
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The deposition rate of a porous insulation film is increased, and the film strength of the porous insulation film is improved. Two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, are vaporized, and transported with a carrier gas to a reactor (chamber), and an oxidant gas including an oxygen atom is added thereto. Thus, a porous insulation film is formed by a plasma CVD (Chemical Vapor Deposition) method or a plasma polymerization method in the reactor (chamber). In the step, the ratio of the flow rate of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less.
First claim
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What is claimed is: 1. A method for manufacturing a porous insulation film, the method comprising a step of: vaporizing two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, transporting the vaporized raw materials with a carrier gas to a reactor, and adding an oxidant gas including an oxygen atom thereto, and forming a porous insulation film by a plasma CVD (Chemical Vapor Deposition) me…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/665Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9034740B2 cover?
- The deposition rate of a porous insulation film is increased, and the film strength of the porous insulation film is improved. Two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, are vaporized, and transported with a carrier gas to a reactor (chamber), and an oxidant gas including an oxygen atom is a…
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P14/665. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).