Semiconductor device fabrication method and semiconductor device

Patent metadata

Field	Value
Publication number	US-9034708-B2
Application number	US-201314101373-A
Country	US
Kind code	B2
Filing date	Dec 10, 2013
Priority date	Dec 21, 2012
Publication date	May 19, 2015
Grant date	May 19, 2015

Abstract

There is provided a method of fabricating a semiconductor device, the method including: forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate; grinding a rear surface of the substrate; after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus; after the first etching, performing a second etching that etches the rear surface with an etching method with a lower etching rate than the first etching; and after the second etching, forming a second semiconductor region through which the current is to flow, by implanting impurities from the rear surface of the substrate.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, the method comprising:
forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate;
grinding a rear surface of the substrate;
after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus;…

Assignees

• Lapis Semiconductor Co Ltd

Inventors

• Yoshinari Masataka

Classifications

• H10P95/60

  Electricity · mapped topic

• H10P90/124

  Electricity · mapped topic

• H10P70/56

  Electricity · mapped topic

• H10P54/00

  Electricity · mapped topic

• H10P52/00

  Electricity · mapped topic