Imaging element and imaging device
US-2024388815-A1 · Nov 21, 2024 · US
Backside illuminated image sensor and method of manufacturing the same
US9034682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9034682-B2 |
| Application number | US-201113177253-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 6, 2011 |
| Priority date | Jul 7, 2010 |
| Publication date | May 19, 2015 |
| Grant date | May 19, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a backside illuminated image sensor having a pixel array, the method comprising: forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of the pixel array in the first semiconductor layer; forming a second semiconductor layer on a first surface of the first semiconductor layer; forming a second isolation layer in the second semiconductor layer, such that the second isol…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10F39/199Primary
Electricity · mapped topic
Electricity · mapped topic
- H10F39/807Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9034682B2 cover?
- A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, …
- Who is the assignee on this patent?
- Shim Eun-Sub, Ahn Jung-Chak, Kim Bum-Suk, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10F39/199. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).