Bipolar CMOS select device for resistive sense memory

Patent metadata

Field	Value
Publication number	US-9030867-B2
Application number	US-50221109-A
Country	US
Kind code	B2
Filing date	Jul 13, 2009
Priority date	Oct 20, 2008
Publication date	May 12, 2015
Grant date	May 12, 2015

Abstract

A resistive sense memory apparatus includes a bipolar select device having a semiconductor substrate and a plurality of transistors disposed in the semiconductor substrate and forming a row or transistors. Each transistor includes an emitter contact and a collector contact. Each collector contact is electrically isolated from each other and each emitter contact is electrically isolated from each other. A gate contact extends along a channel region between the emitter contact and a collector contact. A base contact is disposed within the semiconductor substrate such that the emitter contact and a collector contact is between the gate contact and the base contact. A resistive sense memory cells is electrically coupled to each collector contact or emitter contact and a bit line.

First claim

What is claimed is:

1. A resistive sense memory apparatus comprising:
a bipolar select device comprising:
a semiconductor substrate;
a plurality of field effect transistors disposed in the semiconductor substrate and forming a row of field effect transistors, each field effect transistor comprising an emitter contact and a collector contact, wherein each collector contact is electrically isolated from each other and each emitter contact is electrically isolated from each other,…

Assignees

• Lu Yong
• Liu Hongyue
• Khoury Maroun
• Chen Yiran
• Seagate Technology Llc

Inventors

• Lu Yong
• Liu Hongyue
• Khoury Maroun
• Chen Yiran

Classifications

• G11C13/0004 Primary

  Physics · mapped topic

• G11C13/0011

  Physics · mapped topic

• G11C13/004

  Physics · mapped topic

• G11C2213/76

  Physics · mapped topic

• G11C11/16

  Physics · mapped topic