Heat spreading layer with high thermal conductivity
US-2015371919-A1 · Dec 24, 2015 · US
US9029989B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9029989-B2 |
| Application number | US-201313969053-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2013 |
| Priority date | Sep 24, 2012 |
| Publication date | May 12, 2015 |
| Grant date | May 12, 2015 |
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A semiconductor package includes a substrate, a ground circuit supported by the substrate, at least one semiconductor chip disposed on the substrate and a carbon-containing heat-dissipating part disposed on the substrate and electrically connected to the ground circuit. The heat-dissipating part may include carbon fibers and/or carbon cloth.
Opening claim text (preview).
What is claimed is: 1. A semiconductor package, comprising: a substrate; a ground circuit supported by the substrate; at least one semiconductor chip disposed on the substrate; and a carbon-containing heat-dissipating part disposed on the substrate adjacent a periphery of and not overlapping the at least one semiconductor chip and electrically connected to the ground circuit. 2. The semiconductor package of claim 1 , wherein the heat-dissipating part comprises carbon fibers and/or carbon cloth. 3. The semiconductor package of claim 1 , further comprising a connection pattern disposed adjacent to the at least one semiconductor chip and configured to electrically connect the ground circuit to the heat-dissipating part. 4. The semiconductor package of claim 1 , wherein the heat-dissipating part has a top surface that is lower than or substantially coplanar with a top surface of the at least one semiconductor chip. 5. The semiconductor package of claim 1 , further comprising a molding part covering the heat-dissipating part. 6. The semiconductor package of claim 1 , further comprising a molding part disposed on the substrate and covering the semiconductor chip and the heat-dissipating part. 7. The semiconductor package of claim 1 , wherein the heat-dissipating part comprises a first heat-dissipating part disposed adjacent a periphery of the semiconductor chip and wherein the package further comprises a second heat-dissipating part overlying the semiconductor chip and the first heat-dissipating pattern and electrically connected to the first heat-dissipating part via a pattern disposed between the first and second heat-dissipating patterns. 8. The semiconductor package of claim 7 , wherein the second heat-dissipating part comprise a metal and/or graphite. 9. The semiconductor package of claim 1 , wherein the at least one semiconductor chip comprises a plurality of semiconductor chips stacked on the substrate. 10. A semiconductor device, comprising: a first semiconductor package comprising a first substrate, at least one first semiconductor chip disposed on the first substrate and a ground circuit supported by the first substrate; a second package disposed on the first package and comprising a second substrate, at least one second semiconductor chip disposed on the second substrate, and a carbon-containing heat-dissipating part disposed on the substrate; and a connecting part connecting the heat-dissipating part of the second package to the ground circuit of the first package. 11. The device of claim 10 , wherein the second package further comprises a molding part disposed on the second substrate and covering the heat-dissipating part. 12. The device of claim 10 , wherein the heat-dissipating part is disposed along a periphery of the at least one second semiconductor chip and has a top surface that is lower than or substantially coplanar with a top surface of the at least one second semiconductor chip. 13. The device of claim 10 , wherein the heat-dissipating part comprises a first heat-dissipating part disposed along a periphery of the at least one second semiconductor chip and wherein the device further includes a second heat-dissipating part electrically connected to the first heat-dissipating part and comprising metal and/or graphite. 14. A packaged semiconductor device comprising: a substrate; a ground circuit supported by the substrate; at least one semiconductor chip disposed on the substrate; a molded region disposed on the substrate and conforming to at least one sidewall of the at least one semiconductor chip; and a carbon-containing region disposed in the molded region adjacent a periphery of the at least one semiconductor chip and connected to the ground circuit. 15. The packaged semiconductor device of claim 14 , wherein the carbon-containing region is thermally and electrically conductive. 16. The packaged semiconductor device of claim 14 , wherein the molded region at least partially covers a top surface of the at least one semiconductor chip. 17. The packaged semiconductor device of claim 14 , further comprising a metal and/or graphite region overlying the at least one semiconductor chip and connected to the carbon-containing region. 18. The packaged semiconductor device of claim 14 , wherein the carbon-containing region comprises carbon fibers and/or carbon cloth. 19. The semiconductor package of claim 1 , wherein the heat dissipating part comprises a rectangular pattern extending completely around the periphery of the at least one semiconductor chip.
Shielding bumps · CPC title
between stacked chips · CPC title
characterised by arrangements for thermal management of the stacked chips · CPC title
Package configurations · CPC title
characterised by changes in properties of the bump connectors during connecting · CPC title
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