Semiconductor device

Patent metadata

Field	Value
Publication number	US-9029918-B2
Application number	US-201113232839-A
Country	US
Kind code	B2
Filing date	Sep 14, 2011
Priority date	Sep 15, 2010
Publication date	May 12, 2015
Grant date	May 12, 2015

Abstract

According to one embodiment, a semiconductor device includes a first major electrode, a first semiconductor layer, a first conductivity-type base layer, a second conductivity-type base layer, a second semiconductor layer, a buried layer, a buried electrode, a gate insulating film, a gate electrode, and a second major electrode. The buried layer of the second conductivity type selectively is provided in the first conductivity-type base layer. The buried electrode is provided in a bottom portion of a trench which penetrates the second conductivity-type base layer to reach the buried layer. The buried electrode is in contact with the buried layer. The gate electrode is provided inside the gate insulating film in the trench. The second major electrode is provided on the second semiconductor layer and is electrically connected to the second semiconductor layer and the buried electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first electrode;
a first conductivity-type base layer provided on the first electrode;
a second conductivity-type base layer provided on the first conductivity-type base layer;
a first semiconductor layer of the first conductivity-type provided on the second conductivity-type base layer;
a gate electrode extending from the first semiconductor layer into the second conductivity-type base layer;
a gate insulating…

Assignees

• Ogura Tsuneo
• Toshiba Kk

Inventors

• Ogura Tsuneo

Classifications

• H10D64/2527

  Electricity · mapped topic

• H10D62/127

  Electricity · mapped topic

• H10D84/144

  Electricity · mapped topic

• H10D64/512

  Electricity · mapped topic

• H10D64/256

  Electricity · mapped topic