Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-9029906-B2
Application number	US-201414317514-A
Country	US
Kind code	B2
Filing date	Jun 27, 2014
Priority date	Nov 14, 2008
Publication date	May 12, 2015
Grant date	May 12, 2015

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts.

First claim

What is claimed is:

1. A semiconductor light emitting device comprising:
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first and second semiconductor layers;
a conductive support member disposed under the second conductive semiconductor layer;
an insulating layer disposed between the second conductive semiconductor layer and the…

Assignees

• Lg Innotek Co Ltd

Inventors

• Jeong Hwan Hee

Classifications

• H10W72/0198

  Electricity · mapped topic

• H10H20/84

  Electricity · mapped topic

• H10H20/018

  Electricity · mapped topic

• H10H20/831

  Electricity · mapped topic

• H10H20/819 Primary

  Electricity · mapped topic