Photoresist stripping and cleaning composition, method of its preparation and its use
US-9223221-B2 · Dec 29, 2015 · US
US9029271B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9029271-B2 |
| Application number | US-201314139986-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 24, 2013 |
| Priority date | Dec 31, 2012 |
| Publication date | May 12, 2015 |
| Grant date | May 12, 2015 |
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A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period λ o in the trench by the annealing.
Opening claim text (preview).
What is claimed is: 1. A method of patterning a block copolymer layer, comprising: providing a guide pattern on a surface of a substrate, in a plan view, the guide pattern comprising: sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by the surface of the substrate as a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudi…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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