Semiconductor device and manufacturing method thereof
US-2024404870-A1 · Dec 5, 2024 · US
US9028708B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9028708-B2 |
| Application number | US-201013510514-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 25, 2010 |
| Priority date | Nov 30, 2009 |
| Publication date | May 12, 2015 |
| Grant date | May 12, 2015 |
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Official abstract text for this publication.
An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.
Opening claim text (preview).
The invention claimed is: 1. An aqueous chemical mechanical polishing agent (A) comprising at least one type of solid particles (a1) finely dispersed in an aqueous phase, wherein the at least one type of solid particles comprise: (a11) a metal corrosion inhibitor, and (a12) at least one solid material selected from the group consisting of a synthetic polymer, a modified naturally occurring polymer, and an unmodified naturally occurring polymer, wherein said synthetic polymer i…
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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