Semiconductor device
US-2024022211-A1 · Jan 18, 2024 · US
US9024708B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9024708-B2 |
| Application number | US-201213615609-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2012 |
| Priority date | Jun 28, 2012 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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This invention provides a micromechanical resonator oscillator structure and a driving method thereof. As power handling ability of a resonator is proportional to its equivalent stiffness, a better power handling capability is obtained by driving a micromechanical resonator oscillator at its high equivalent stiffness area. One of the embodiments of this invention is demonstrated by using a beam resonator. A 9.7-MHZ beam resonator via the high-equivalent stiffness area driven method shows better power handling capability and having lower phase noise.
Opening claim text (preview).
What is claimed is: 1. A micro mechanical resonator oscillator structure, comprising: a substrate; an insulating layer deposited on the substrate; a conductive layer deposited on the insulating layer, the conductive layer comprising: an electrode set; and an input contact; an oscillation unit having a high equivalent stiffness area and a low equivalent stiffness area; and a plurality of anchor points, at least one of the anchor points connecting the oscillation unit to…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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