Fin-FET with mechanical stress of the fin perpendicular to the substrate direction

Patent metadata

Field	Value
Publication number	US-9024364-B2
Application number	US-201213599613-A
Country	US
Kind code	B2
Filing date	Aug 30, 2012
Priority date	Mar 12, 2012
Publication date	May 5, 2015
Grant date	May 5, 2015

Abstract

A semiconductor device in one embodiment includes a semiconductor substrate, a fin disposed on a surface of the semiconductor substrate, an insulator including a gate insulator disposed on a side surface of the fin, and a gate electrode disposed on the insulator that is disposed on side surfaces of the fin and an upper surface of the fin. The device further includes a plurality of epitaxial stripe shaped layers disposed horizontally on the side surface of the fin at different heights, and an interlayer dielectric disposed on the semiconductor substrate to cover the fin and applying a stress to the fin and the epitaxial layers. Any two adjacent epitaxial layers along the fin height direction determine a gap and the gaps between adjacent layers increase or decrease with increasing distance from the substrate.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate;
a fin disposed on a surface of the semiconductor substrate;
an insulator including a gate insulator, said gate insulator disposed on side surfaces of the fin;
a gate electrode disposed on the insulator that is disposed on the side surfaces of the fin and also disposed on an upper surface of the fin;
a plurality of epitaxial stripe shaped layers disposed horizontally on the side surfa…

Assignees

• Okano Kimitoshi
• Toshiba Kk

Inventors

• Okano Kimitoshi

Classifications

• H10D84/83

  Electricity · mapped topic

• H10D64/514

  Electricity · mapped topic

• H10D64/68

  Electricity · mapped topic

• H10D30/6757

  Electricity · mapped topic

• H10D30/6735

  Electricity · mapped topic