Sub-pixel nBn detector

Patent metadata

Field	Value
Publication number	US-9024359-B2
Application number	US-201213344499-A
Country	US
Kind code	B2
Filing date	Jan 5, 2012
Priority date	Nov 14, 2006
Publication date	May 5, 2015
Grant date	May 5, 2015

Abstract

A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a bather layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.

First claim

The invention claimed is:

1. A photodetector comprising:
a photo absorbing layer having a predetermined doping type,
a contact layer having the predetermined doping type, and
a barrier layer disposed between said photo absorbing and contact layers, said barrier layer being configured to prevent majority carrier transport;
where the barrier layer is graded with a first grading at a first interface area between said barrier layer and said contact layer and graded with a second…

Assignees

• Scott Jeffrey W
• Jones Colin E
• Caine Ernie J
• Cockrum Charles A
• Lockheed Corp

Inventors

• Scott Jeffrey W
• Jones Colin E
• Caine Ernie J
• Cockrum Charles A

Classifications

• H10F77/124

  Electricity · mapped topic

• H10F39/812

  Electricity · mapped topic

• H10F39/80

  Electricity · mapped topic

• H10F39/021

  Electricity · mapped topic

• H10F39/18

  Electricity · mapped topic