Surface passivation by quantum exclusion using multiple layers

Patent metadata

Field	Value
Publication number	US-9024344-B2
Application number	US-201313791671-A
Country	US
Kind code	B2
Filing date	Mar 8, 2013
Priority date	Jun 15, 2010
Publication date	May 5, 2015
Grant date	May 5, 2015

Abstract

A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×10 14 cm −2 , and locally exceeding 10 22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

First claim

What is claimed is:

1. A silicon device, comprising:
a silicon wafer bounded by a first surface and a second surface opposite said first surface, said silicon wafer having a device fabricated on one of said first surface and said second surface;
said silicon wafer having a doping profile situated adjacent at least one of said first surface and said second surface, said doping profile having at least two doped layers, each of said at least two doped layers having a thickness of l…

Assignees

• Hoenk Michael E
• California Inst Of Techn

Inventors

• Hoenk Michael E

Classifications

• H10F77/311

  Electricity · mapped topic

• H10F77/80

  Electricity · mapped topic

• H10F77/30 Primary

  Electricity · mapped topic

• H01L31/0216 Primary

  Electricity · mapped topic

• H01L31/02167

  Electricity · mapped topic