Substrate, template substrate, semiconductor light emitting element, semiconductor light emitting element producing method, illumination device using semiconductor light emitting element and electronic device

US9024331B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9024331-B2
Application numberUS-201013516295-A
CountryUS
Kind codeB2
Filing dateDec 13, 2010
Priority dateDec 17, 2009
Publication dateMay 5, 2015
Grant dateMay 5, 2015

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Abstract

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Disclosed is a semiconductor light emitting element (LC) provided with a substrate ( 110 ) having one surface on which plural hexagonal-pyramid-shaped protrusions ( 110 b ) are provided, a base layer ( 130 ) provided so as to be in contact with the surface on which the protrusions ( 110 b ) are provided, an n-type semiconductor layer ( 140 ) provided so as to be in contact with the base layer ( 130 ), a light emitting layer ( 150 ) provided so as to be in contact with the n-type semiconductor layer ( 140 ), and a p-type semiconductor layer ( 160 ) provided so as to be in contact with the light emitting layer ( 150 ). Each protrusion ( 110 b ) scatters light in lateral and oblique directions within the semiconductor light emitting element (LC). The protrusions are densely arranged on a substrate on which semiconductor layers are laminated, so that the light extraction efficiency is improved.

First claim

Opening claim text (preview).

The invention claimed is: 1. A substrate for laminating a semiconductor layer thereon, wherein a plurality of protrusions in a hexagonal-pyramid shape is provided directly on the surface on which the semiconductor layer is laminated, and a side of the bottom surface of each of the plurality of protrusions is set in parallel with a side of the bottom surface of an adjacent protrusion, wherein the substrate is composed of single crystal sapphire whose C-plane is a principal plane, a…

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What does patent US9024331B2 cover?
Disclosed is a semiconductor light emitting element (LC) provided with a substrate ( 110 ) having one surface on which plural hexagonal-pyramid-shaped protrusions ( 110 b ) are provided, a base layer ( 130 ) provided so as to be in contact with the surface on which the protrusions ( 110 b ) are provided, an n-type semiconductor layer ( 140 ) provided so as to be in contact with the base lay…
Who is the assignee on this patent?
Sakano Yohei, Toyoda Gosei Kk
What technology area does this patent fall under?
Primary CPC classification H10P14/3251. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).