Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
US9024331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9024331-B2 |
| Application number | US-201013516295-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 13, 2010 |
| Priority date | Dec 17, 2009 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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Disclosed is a semiconductor light emitting element (LC) provided with a substrate ( 110 ) having one surface on which plural hexagonal-pyramid-shaped protrusions ( 110 b ) are provided, a base layer ( 130 ) provided so as to be in contact with the surface on which the protrusions ( 110 b ) are provided, an n-type semiconductor layer ( 140 ) provided so as to be in contact with the base layer ( 130 ), a light emitting layer ( 150 ) provided so as to be in contact with the n-type semiconductor layer ( 140 ), and a p-type semiconductor layer ( 160 ) provided so as to be in contact with the light emitting layer ( 150 ). Each protrusion ( 110 b ) scatters light in lateral and oblique directions within the semiconductor light emitting element (LC). The protrusions are densely arranged on a substrate on which semiconductor layers are laminated, so that the light extraction efficiency is improved.
Opening claim text (preview).
The invention claimed is: 1. A substrate for laminating a semiconductor layer thereon, wherein a plurality of protrusions in a hexagonal-pyramid shape is provided directly on the surface on which the semiconductor layer is laminated, and a side of the bottom surface of each of the plurality of protrusions is set in parallel with a side of the bottom surface of an adjacent protrusion, wherein the substrate is composed of single crystal sapphire whose C-plane is a principal plane, a…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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