Metallization structure for high power microelectronic devices

Patent metadata

Field	Value
Publication number	US-9024327-B2
Application number	US-95636607-A
Country	US
Kind code	B2
Filing date	Dec 14, 2007
Priority date	Dec 14, 2007
Publication date	May 5, 2015
Grant date	May 5, 2015

Abstract

A semiconductor device structure is disclosed that includes a wide-bandgap semiconductor portion selected from the group consisting of silicon carbide and the Group III nitrides. An interconnect structure is made to the semiconductor portion, and the interconnect structure includes at least two diffusion barrier layers alternating with two respective high electrical conductivity layers. The diffusion barrier layers have a coefficient of thermal expansion different from and lower than the coefficient of thermal expansion of the high electrical conductivity layers. The difference in the respective coefficients of thermal expansions are large enough to constrain the expansion of the high conductivity layers but less than a difference that would create a strain between adjacent layers that would exceed the bond strength between the layers.

First claim

The invention claimed is:

1. A semiconductor device structure comprising:
a wide-bandgap semiconductor portion selected from the group consisting of silicon carbide and Group III nitrides;
an interconnect structure to said wide-bandgap semiconductor portion, said interconnect structure comprising a plurality of diffusion barrier layers alternating with a plurality of high electrical conductivity layers, the plurality of diffusion barrier layers and the plurality of high electric…

Assignees

• Ward Allan
• Henning Jason
• Cree Inc

Inventors

• Ward Allan
• Henning Jason

Classifications

• H10W74/137

  Electricity · mapped topic

• H10W72/90

  Electricity · mapped topic

• H10W72/59

  Electricity · mapped topic

• H10W20/40

  Electricity · mapped topic

• H10P72/7448

  Electricity · mapped topic