GaN dual field plate device with single field plate metal

Patent metadata

Field	Value
Publication number	US-9024324-B2
Application number	US-201213603801-A
Country	US
Kind code	B2
Filing date	Sep 5, 2012
Priority date	Sep 5, 2012
Publication date	May 5, 2015
Grant date	May 5, 2015

Abstract

A low leakage current transistor ( 2 ) is provided which includes a GaN-containing substrate ( 11 - 14 ) covered by a passivation surface layer ( 17 ) in which a T-gate electrode with sidewall extensions ( 20 ) is formed and coated with a multi-level passivation layer ( 30 - 32 ) which includes an intermediate etch stop layer ( 31 ) which is used to define a continuous multi-region field plate ( 33 ) having multiple distances between the bottom surface of the field plate 33 and the semiconductor substrate in the gate-drain region of the transistor.

First claim

What is claimed is:

1. A method of forming gallium nitride transistor, comprising:
providing a substrate with a gallium nitride layer covered by a dielectric surface layer;
forming a conductive gate electrode with a contact base portion in contact with a gate contact surface of the substrate;
forming drain and source electrodes spaced apart from the conductive gate electrode and in contact with the substrate;
forming a plurality of dielectric layers over the gate, drain, and…

Assignees

• Teplik James A
• Green Bruce M
• Freescale Semiconductor Inc

Inventors

• Teplik James A
• Green Bruce M

Classifications

• H10D62/8503

  Electricity · mapped topic

• H10D30/478

  Electricity · mapped topic

• H10D30/475

  Electricity · mapped topic

• H10D30/015

  Electricity · mapped topic

• H10D64/111 Primary

  Electricity · mapped topic