Display apparatus
US-2024414942-A1 · Dec 12, 2024 · US
US9024319B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9024319-B2 |
| Application number | US-201313968549-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2013 |
| Priority date | Nov 14, 2011 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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A thin film transistor element is formed in each of adjacent first and second apertures defined by partition walls. In plan view of a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the second aperture, and in plan view of a bottom portion of the second aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the first aperture.
Opening claim text (preview).
The invention claimed is: 1. A thin film transistor device comprising: a first thin film transistor element and a second thin film transistor element that are arranged so as to be adjacent to each other with a gap therebetween, wherein each of the first thin film transistor element and the second thin film transistor element comprises: a gate electrode; an insulating layer disposed on the gate electrode; a source electrode and a drain electrode disposed on the insulating la…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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