Thin film transistor and display panel
US-2024282862-A1 · Aug 22, 2024 · US
Thin film transistor substrate manufacturing method thereof, display
US9024318B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9024318-B2 |
| Application number | US-201213722570-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 20, 2012 |
| Priority date | Dec 22, 2011 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A thin film transistor substrate, comprising: a first substrate; a gate electrode disposed on the first substrate; a gate insulating layer disposed on the first substrate and covering the gate electrode; an active layer disposed on the gate insulating layer and located above the gate electrode; a photo-sensitive protective layer disposed on the active layer and exposing a first portion and a second portion of the active layer, wherein the first porti…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9024318B2 cover?
- An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer whi…
- Who is the assignee on this patent?
- Innocom Tech Shenzhen Co Ltd, Chimei Innolux Corp, Innolux Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/67. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).