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Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9024317B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9024317-B2 |
| Application number | US-201113310824-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 5, 2011 |
| Priority date | Dec 24, 2010 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor circuit capable of controlling and holding the threshold voltage of a transistor at an optimal level and a driving method thereof are disclosed. A storage device, a display device, or an electronic device including the semiconductor circuit is also provided. The semiconductor circuit comprises a diode and a first capacitor provided in a node to which a transistor to be controlled is connected through its back gate. This structure allows the application of desired voltage to the back gate so that the threshold voltage of the transistor is controlled at an optimal level and can be held for a long time. A second capacitor connected in parallel with the diode is optionally provided so that the voltage of the node can be changed temporarily.
First claim
Opening claim text (preview).
What is claimed is: 1. A circuit comprising: a diode comprising a first electrode and a second electrode; a first capacitor electrically connected to the second electrode of the diode; a second capacitor comprising a first electrode and a second electrode; and a transistor comprising a back gate, wherein the first electrode of the diode is configured to be input with a signal, wherein the first electrode of the diode is electrically connected to the first electrode of th…
Assignees
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Classifications
Physics · mapped topic
- G09G3/3648Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9024317B2 cover?
- A semiconductor circuit capable of controlling and holding the threshold voltage of a transistor at an optimal level and a driving method thereof are disclosed. A storage device, a display device, or an electronic device including the semiconductor circuit is also provided. The semiconductor circuit comprises a diode and a first capacitor provided in a node to which a transistor to be controlle…
- Who is the assignee on this patent?
- Endo Masami, Ohshima Kazuaki, Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification G09G3/3648. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).