Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor

US9024312B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9024312-B2
Application numberUS-201013499097-A
CountryUS
Kind codeB2
Filing dateSep 29, 2010
Priority dateSep 30, 2009
Publication dateMay 5, 2015
Grant dateMay 5, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element which has excellent surface smoothness and is capable of suppressing deterioration of the characteristics of thin film elements. Also disclosed are methods for manufacturing substrates for thin film elements.

First claim

Opening claim text (preview).

The invention claimed is: 1. A substrate for a flexible device, comprising a metal foil; a planarizing layer that is formed on the metal foil and contains polyimide; and a contact adhesive layer that is formed on the planarizing layer and contains an inorganic compound, wherein the planarizing layer and the contact adhesive layer are formed partially over the metal foil, and the planarizing layer and the contact adhesive layer are formed in an area excluding the outer peripheral a…

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What does patent US9024312B2 cover?
Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element whic…
Who is the assignee on this patent?
Fukuda Shunji, Sakayori Katsuya, Arihara Keita, and 3 more
What technology area does this patent fall under?
Primary CPC classification H10K77/111. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).