Semiconductor light emitting device

US9024293B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9024293-B2
Application numberUS-201414155038-A
CountryUS
Kind codeB2
Filing dateJan 14, 2014
Priority dateFeb 16, 2010
Publication dateMay 5, 2015
Grant dateMay 5, 2015

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In wn Ga 1-wn N and has a layer thickness t wn . An n-side end barrier layer which is closest to the n-type semiconductor layer contains In bn Ga 1-bn N and has a layer thickness t bn . A p-side end well layer which is closest to the p-type semiconductor layer contains In wp Ga 1-wp N and has a layer thickness t wp . A p-side end barrier layer which is closest to the p-type semiconductor contains In bp Ga 1-bp N and has a layer thickness t bp . A value of (wp×t wp +bp×t bp )/(t wp +t bp ) is higher than (wn×t wn +bn×t bn )/(t wn +t bn ) and is not higher than 5 times (wn×t wn +bn×t bn )/(t wn +t bn ).

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor light emitting device, comprising: an n-type semiconductor layer containing a nitride semiconductor; a p-type semiconductor layer containing a nitride semiconductor; and a light emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting portion including a plurality of barrier layers and a plurality of well layers, the plurality of barrier layers and the plurality of well…

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What does patent US9024293B2 cover?
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In wn Ga…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H10H20/812. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 05 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).