Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
US9024293B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9024293-B2 |
| Application number | US-201414155038-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 14, 2014 |
| Priority date | Feb 16, 2010 |
| Publication date | May 5, 2015 |
| Grant date | May 5, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In wn Ga 1-wn N and has a layer thickness t wn . An n-side end barrier layer which is closest to the n-type semiconductor layer contains In bn Ga 1-bn N and has a layer thickness t bn . A p-side end well layer which is closest to the p-type semiconductor layer contains In wp Ga 1-wp N and has a layer thickness t wp . A p-side end barrier layer which is closest to the p-type semiconductor contains In bp Ga 1-bp N and has a layer thickness t bp . A value of (wp×t wp +bp×t bp )/(t wp +t bp ) is higher than (wn×t wn +bn×t bn )/(t wn +t bn ) and is not higher than 5 times (wn×t wn +bn×t bn )/(t wn +t bn ).
Opening claim text (preview).
The invention claimed is: 1. A semiconductor light emitting device, comprising: an n-type semiconductor layer containing a nitride semiconductor; a p-type semiconductor layer containing a nitride semiconductor; and a light emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting portion including a plurality of barrier layers and a plurality of well layers, the plurality of barrier layers and the plurality of well…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.